- Title
- Reply to: Comment on 'Valence surface electronic states on Ge(001)' (commentary)
- Creator
- Radny, M. W.; Shah, G. A.; Schofield, S. R.; Smith, P. V.; Curson, N. J.
- Relation
- Physical Review Letters Vol. 103, Issue 18
- Publisher Link
- http://dx.doi.org/10.1103/PhysRevLett.103.189702
- Publisher
- American Physical Society
- Resource Type
- journal article
- Date
- 2009
- Description
- We have carried out extensive calculations of the Ge(001)c4 X 2 clean surface using a slab containing 8, 10, and 12 Ge layers, respectively. These calculations have again been performed using the VASP code. The change in the electronic structure with increasing number of layers also affects the relationship between the back bond and dangling bond surface states.
- Subject
- Ge(001); electronic structure; Ge layers; surface; valence
- Identifier
- uon:7371
- Identifier
- http://hdl.handle.net/1959.13/807345
- Identifier
- ISSN:0031-9007
- Full Text
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