Reply to: Comment on 'Valence surface electronic states on Ge(001)' (commentary)

Title: Reply to: Comment on 'Valence surface electronic states on Ge(001)' (commentary)
Creator: Radny, M. W.; Shah, G. A.; Schofield, S. R.; Smith, P. V.; Curson, N. J.
Relation: Physical Review Letters Vol. 103, Issue 18
Publisher Link: http://dx.doi.org/10.1103/PhysRevLett.103.189702
Publisher: American Physical Society
Resource Type: journal article
Date: 2009
Description: We have carried out extensive calculations of the Ge(001)c4 X 2 clean surface using a slab containing 8, 10, and 12 Ge layers, respectively. These calculations have again been performed using the VASP code. The change in the electronic structure with increasing number of layers also affects the relationship between the back bond and dangling bond surface states.
Subject: Ge(001); electronic structure; Ge layers; surface; valence
Identifier: uon:7371
Identifier: http://hdl.handle.net/1959.13/807345
Identifier: ISSN:0031-9007
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