Topological electronic effects in exfoliated thin films of bismuth telluride

Title: Topological electronic effects in exfoliated thin films of bismuth telluride
Creator: Hermanowicz, M.; Radny, M. W.
Relation: Physica Status Solidi (B): Basic Research Vol. 254, Issue 9, no. 1700086
Publisher Link: http://dx.doi.org/10.1002/pssb.201700086
Publisher: Wiley
Resource Type: journal article
Date: 2017
Description: An important aspect of band gap engineering in 2D thin films of topological insulators is determining their surface electronic properties at various atomic terminations. In this work, the electronic structure evolution of thin films of bismuth telluride (Bi₂Te₃) with varying surface termination is discussed based on density functional theory. The reported electronic effects include closure of the hybridization energy band gap and distinct spatial charge localization of topological surface states on two types of defected surfaces -Te and Bi-terminated. The observed band gap value changes periodically every five monolayers following the quintuple-based layered structure. The studied system shares, to a large extent, the main features with thin films of bismuth selenide (Bi₂Se₃), although with a stronger size effect.
Subject: bismuth telluride; electronic band structure; surface states; topological insulators
Identifier: http://hdl.handle.net/1959.13/1397045
Identifier: uon:34173
Identifier: ISSN:0370-1972
Language: eng
Reviewed

		Thumbnail	File	Description	Size	Format