Measurements of Si ion stopping in amorphous silicon

Title: Measurements of Si ion stopping in amorphous silicon
Creator: Whitlow, Harry J.; Timmers, Heiko; Elliman, Robert G.; Weijers, Tessica D. M.; Zhand, Yanwen; Uribastera, Juan; O'Connor, D. John
Relation: Nuclear Instruments and Methods in Physics Research B Vol. 190, Issue 1-4, p. 84-88
Publisher Link: http://dx.doi.org/10.1016/S0168-583X(01)01301-5
Publisher: Elsevier Science BV
Resource Type: journal article
Date: 2002
Description: The stopping of ²⁸Si ions in polycrystalline Si foils has been measured over the energy range 0.1–3.3 MeV per nucleon. For the low energy interval (0.1–0.5 MeV per nucleon), time of flight-energy elastic recoil detection analysis method was used, whilst for the high energy region (1.2–3.3 MeV per nucleon) the energy loss in the same foil was measured using a Si p–i–n diode with the ²⁸Si ions directly incident on the foil following acceleration. Below the stopping maximum the results are in good agreement with literature data based on Doppler shift measurements of short nuclear lifetimes but are about 20% smaller than the SRIM prediction. Above the stopping maximum the data are in agreement with SRIM within the limits of statistical uncertainty.
Subject: silicon; stopping; energy loss; time of flight
Identifier: http://hdl.handle.net/1959.13/33923
Identifier: uon:3379
Identifier: ISSN:0168-583X
Language: eng
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