- Title
- Near surface changes due to 700 keV Si⁺ irradiation of iitanium silicon carbide
- Creator
- Qi, Qiang; Liu, Chaozhuo Z.; King, Bruce V.; O'Connor, Daryl J.; Kisi, Erich H.; Wang, Kung; Shi, Liqun Q.
- Relation
- Journal of the American Ceramic Society Vol. 98, Issue 12, p. 4050-4057
- Publisher Link
- http://dx.doi.org/10.1111/jace.13793
- Publisher
- Wiley-Blackwell
- Resource Type
- journal article
- Date
- 2015
- Description
- The radiation damage response of Ti₃SiC₂ heated from 120°C to 850°C during 700 keV Si⁺ irradiation has been investigated. The samples were analyzed using glancing incidence X-ray diffraction, Rutherford backscattering spectrometry, Raman spectroscopy, and scanning electron microscopy. For the sample at 120°C, irradiation results in a buildup of a heterogeneous surface and the formation of TiCx. Irradiation at 200°C results in maximum microstrain, a maximum in the c lattice parameter, and the appearance of a ß phase in addition to the normal a phase of Ti₃SiC₂. A minimum in the observed damage level near the surface was seen for irradiation at a sample temperature of 300°C but the damaged phase increases at higher temperatures. Differences between the present work and a previous C irradiation study have been ascribed to the enhanced Si defect transport at low temperatures.
- Subject
- radiation damage; titanium silicon carbide; x-ray diffraction
- Identifier
- http://hdl.handle.net/1959.13/1314864
- Identifier
- uon:22842
- Identifier
- ISSN:0002-7820
- Language
- eng
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