Damage accumulation and recovery in C+ -irradiated Ti3SiC2

Title: Damage accumulation and recovery in C⁺ -irradiated Ti₃SiC₂
Creator: Qi, Q.; Cheng, G. J.; Shi, L. Q.; O'Connor, D. J.; King, B. V.; Kisi, E. H.
Relation: Acta Materialia Vol. 66, p. 317-325
Publisher Link: http://dx.doi.org/10.1016/j.actamat.2013.11.019
Publisher: Pergamon
Resource Type: journal article
Date: 2014
Description: The radiation damage response of Tii₃SiC₂ irradiated by 700 keV C ions has been investigated over a range of fluences and sample temperatures. The samples were analysed using a series of experimental techniques, including glancing-incidence X-ray diffraction, Rutherford backscattering spectrometry, Raman spectroscopy and scanning electron microscopy. This material exhibits a high level of tolerance to damage, especially at high temperature. Irradiation at temperatures from room temperature to 270 °C results in decomposition to TiC; however, this is not observed at temperatures above 270 °C. A minimum in the observed damage level is evident for irradiation at a sample temperature of 350 °C. At higher temperatures the damage level increases, and results in material which is made up of damaged Tii₃SiC₂.
Subject: radiation damage; MAX phase; XRD
Identifier: http://hdl.handle.net/1959.13/1295453
Identifier: uon:19030
Identifier: ISSN:1359-6454
Language: eng
Reviewed

		Thumbnail	File	Description	Size	Format