- Title
- Comment on "Transformation of C-type defects on Si (1 0 0) - 2 x 1 surface at room temperature STM/STS study [Surf. Sci. 602 (2008) 2835]"
- Creator
- Warschkow, Oliver; Marks, Nigel A.; Schofield, Steven R.; Radny, Marian W.; Smith, Phillip V.; McKenzie, David R.
- Relation
- Surface Science Vol. 604, Issue 2, p. 235-236
- Publisher Link
- http://dx.doi.org/10.1016/j.susc.2009.10.028
- Publisher
- Elsevier
- Resource Type
- journal article
- Date
- 2010
- Description
- In a recent paper, Sobotík and Ošt’ádal report scanning tunneling microscopy/spectroscopy (STM/STS) experiments in which the common C-defect of the silicon (1 0 0) surface is seen to undergo several structural transformations. These transitions produce four types of surface features that the authors label C2, C′,C2′, and C3. Two of these features (C2 and C′) were previously described by Zhang et al. and Hata et al., while sequences of STM images showing the formation of all four features were also reported by us. Starting with the well-established inter-dimer H + OH model of the C-defect, Sobotík and Ošt’ádal propose that all four features arise from OH and H fragments undergoing site-to-site shift reactions. This interpretation is in sharp variance to our assignment of the C′,C2′, and C3 features to Si–O–Si species that form when OH fragments dissociate. In this comment we discuss why OH and H shift reactions, as advanced by Sobotík and Ošt’ádal cannot alone account for the reported C′,C2′, and C3 features. We provide three specific criticisms.
- Subject
- C-defect; silicon surface; surface features; scanning tunneling microscopy/spectroscopy
- Identifier
- http://hdl.handle.net/1959.13/930689
- Identifier
- uon:10896
- Identifier
- ISSN:0039-6028
- Language
- eng
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