Displacement sensing with silicon flexures in MEMS nanopositioners

Title: Displacement sensing with silicon flexures in MEMS nanopositioners
Creator: Bazaei, Ali; Maroufi, Mohammad; Mohammadi, Ali; Moheimani, S. O. R.
Relation: Journal of Microelectromechanical Systems Vol. 23, Issue 3, p. 502-504
Publisher Link: http://dx.doi.org/10.1109/JMEMS.2014.2316325
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Resource Type: journal article
Date: 2014
Description: We report a novel piezoresistive microelectromechanical system (MEMS) differential displacement sensing technique with a minimal footprint realized through a standard MEMS fabrication process, whereby no additional doping is required to build the piezoresistors. The design is based on configuring a pair of suspension beams attached to a movable stage so that they experience opposite axial forces when the stage moves. The resulting difference between the beam resistances is transduced into a sensor output voltage using a half-bridge readout circuit and differential amplifier. Compared with a single piezoresistive flexure sensor, the design approximately achieves 2, 22, and 200 times improvement in sensitivity, linearity, and resolution, respectively, with 1.5-nm resolution over a large travel range exceeding 12 μm.
Subject: displacement sensor; nanopositioning; SOI-MEMS; piezoresistivity
Identifier: http://hdl.handle.net/1959.13/1303839
Identifier: uon:20733
Identifier: ISSN:1057-7157
Language: eng
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